Semiconductor device and method of manufacturing the same, circuit board, and electronic instrument

ABSTRACT

A semiconductor device includes a semiconductor substrate in which an integrated circuit is formed and which includes interconnects and electrodes, the interconnects electrically connected with the semiconductor substrate, and the electrodes being formed on the interconnects; a resin layer formed on the semiconductor substrate; redistribution interconnects electrically connected with the electrodes; a plurality of external terminals which are formed on the redistribution interconnects and supported by the resin layer; and a plurality of dummy terminals supported by the resin layer without being electrically connected with the electrodes.

This is a Continuation of application Ser. No. 10/637,614 filed Aug. 11,2003, and claims priority to Japanese Patent Application No. 2002-240778filed on Aug. 21, 2002, and Japanese Patent Application No. 2003-284994filed on Aug. 1, 2003. The disclosure of the prior applications ishereby incorporated by reference herein in their entirety.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device, a method ofmanufacturing the same, a circuit board, and an electronic instrument.

FIG. 16 is a plan view showing a schematic configuration of aconventional ball grid array package. FIG. 17 is a cross-sectional viewof the ball grid array package shown in FIG. 16 along the lineXVII-XVII.

In a conventional ball grid array, solder balls, which become externalterminals are disposed in a full grid arrangement or a staggeredarrangement. Interconnects 502 and 504 are formed on each side of aninterposer 500. The interconnects 502 and 504 are connected throughthrough-holes 506 formed in the interposer 500. An IC chip 508 ismounted on the surface of the interposer 500. The IC chip 508 isconnected with the interconnects 502 through bumps 510 and is sealedwith a mold resin 512. Solder balls 514 are disposed on the back surfaceof the interposer 500 in a full grid arrangement. The solder ball 514 isconnected with the interconnect 504.

In a conventional ball grid array, if the interposer 500 is mounted on amotherboard, force is applied to the solder balls 514 due to shrinkageof the interposer 500. In particular, a large amount of force is appliedto the solder ball 514 near the edge of the interposer 500. In the casewhere the size of the interposer 500 is large, it is difficult toprevent connection failure of the solder ball 514.

BRIEF SUMMARY OF THE INVENTION

A semiconductor device according to one aspect of the present inventionincludes:

a semiconductor substrate in which an integrated circuit is formed andwhich includes interconnects and electrodes, the interconnectselectrically connected with the semiconductor substrate, and theelectrodes being formed on the interconnects;

a resin layer formed on the semiconductor substrate;

wiring pattern electrically connected with the electrodes;

a plurality of external terminals which are formed on the wiring patternand supported by the resin layer; and

a plurality of dummy terminals supported by the resin layer withoutbeing electrically connected with the electrodes.

A semiconductor device according to another aspect of the presentinvention includes:

an interposer substrate on which a semiconductor chip issurface-mounted;

an interconnect layer formed on a back surface of the interposersubstrate;

a dummy bump which is formed on the back surface of the interposersubstrate and disposed in an outermost region of the interposersubstrate;

an external terminal which is disposed closer to a center of theinterposer substrate than the dummy bump and connected with theinterconnect layer; and

a through-hole which is formed in the interposer substrate and connectsthe semiconductor chip with the interconnect layer.

A circuit board according to a further aspect of the present inventionhas the above semiconductor device mounted thereon.

An electronic instrument according to a still further aspect of thepresent invention includes the above semiconductor device.

A method of manufacturing a semiconductor device according to a yetfurther aspect of the present invention includes:

forming a resin layer on a semiconductor substrate in which anintegrated circuit is formed and which includes interconnects andelectrodes, the interconnects electrically connected with thesemiconductor substrate, and the electrodes being formed on theinterconnects;

forming wiring pattern so as to be electrically connected with theelectrodes;

forming a plurality of external terminals on the wiring pattern so as tobe supported by the resin layer; and

forming a plurality of dummy terminals so as to be supported by theresin layer without being electrically connected with the electrodes.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

FIG. 1 is illustrative of a semiconductor device according to a firstembodiment of the present invention.

FIG. 2 is a cross-sectional view of the semiconductor device shown inFIG. 1 along the line II-II.

FIG. 3 is a cross-sectional view of the semiconductor device shown inFIG. 1 along the line III-III.

FIG. 4 is illustrative of a modification of a dummy terminal.

FIG. 5 is illustrative of a method of manufacturing a semiconductordevice according to a first embodiment of the present invention.

FIG. 6 is illustrative of a semiconductor device according to a secondembodiment of the present invention.

FIG. 7 is illustrative of a modification of a semiconductor deviceaccording to the second embodiment of the present invention.

FIG. 8 is illustrative of a modification of a dummy terminal.

FIG. 9 is illustrative of another modification of a dummy terminal.

FIG. 10 is illustrative of another modification of a dummy terminal.

FIG. 11 is a cross-sectional view showing a semiconductor deviceaccording to a third embodiment of the present invention.

FIG. 12 is a cross-sectional view showing a semiconductor deviceaccording to the third embodiment of the present invention.

FIG. 13 shows a circuit board on which a semiconductor device accordingto an embodiment of the present invention is mounted.

FIG. 14 shows an electronic instrument including a semiconductor deviceaccording to an embodiment of the present invention.

FIG. 15 shows another electronic instrument including a semiconductordevice according to an embodiment of the present invention.

FIG. 16 is a plan view showing a schematic configuration of aconventional ball grid array package.

FIG. 17 is a cross-sectional view of the ball grid array package shownin FIG. 16 along the line XVII-XVII.

DETAILED DESCRIPTION OF THE EMBODIMENT

Embodiments of the present invention may reduce connection failure ofexternal terminals.

(1) A semiconductor device according to one embodiment of the presentinvention includes:

a semiconductor substrate in which an integrated circuit is formed andwhich includes interconnects and electrodes, the interconnectselectrically connected with the semiconductor substrate, and theelectrodes being formed on the interconnects;

a resin layer formed on the semiconductor substrate;

wiring pattern electrically connected with the electrodes;

a plurality of external terminals which are formed on the wiring patternand supported by the resin layer; and

a plurality of dummy terminals supported by the resin layer withoutbeing electrically connected with the electrodes. According to thissemiconductor device, since bonding strength can be increased by thedummy terminals when bonding the semiconductor device to a motherboardor the like, electrical connection failure of the external terminals canbe reduced.

(2) In this semiconductor device, an upper surface of the resin layermay include a first region which is located in an end portion of theresin layer and a second region which is closer to a center of the resinlayer than the first region, the dummy terminals may be formed in thefirst region, and the external terminals may be formed in the secondregion.

(3) In this semiconductor device, the upper surface of the resin layermay be in a shape of a rectangle, and the dummy terminals may be formedat least at a pair of corners of the rectangle on a diagonal.

(4) In this semiconductor device, the upper surface of the resin layermay have an oblong shape, and the dummy terminals may be formed on bothends of the oblong shape in a longitudinal direction.

(5) In this semiconductor device, at least two of the dummy terminalsmay be disposed adjacent to each other.

(6) In this semiconductor device, each of the dummy terminals may beformed of a material different from a material for each of the externalterminals.

(7) In this semiconductor device, each of the dummy terminals may beformed to include a center portion formed of a resin and a surface layerformed of solder.

(8) In this semiconductor device, each of the dummy terminals may belarger than each of the external terminals.

(9) This semiconductor device may further include a conductive film,which is formed below the external terminals and the dummy terminals.

(10) In this semiconductor device, the conductive film may be formedover the semiconductor substrate and under the resin layer.

(11) In this semiconductor device, the conductive film may be formed tocover a region in which the integrated circuit is formed.

(12) In this semiconductor device, the conductive film may be dividedinto a plurality of sections provided at an interval from each other.

(13) In this semiconductor device, the integrated circuit may be formedin a region in which the plurality of sections forming the conductivefilm are formed.

(14) In this semiconductor device, the conductive film may beelectrically connected with the dummy terminals without beingelectrically connected with the electrodes.

(15) A semiconductor device according to another embodiment of thepresent invention includes:

an interposer substrate on which a semiconductor chip issurface-mounted;

an interconnect layer formed on a back surface of the interposersubstrate;

a dummy bump which is formed on the back surface of the interposersubstrate and disposed in an outermost region of the interposersubstrate;

an external terminal which is disposed closer to a center of theinterposer substrate than the dummy bump and connected with theinterconnect layer; and

a through-hole which is formed in the interposer substrate and connectsthe semiconductor chip with the interconnect layer. According to thissemiconductor device, since it is unnecessary to dispose solder balls inthe region in which the frequency of connection failure is high, theconnection state of the solder balls can be reinforced by the dummybumps when mounting the semiconductor device on a motherboard.Therefore, connection failure of the solder balls can be reduced withoutincreasing the number of steps even if the size of the interposersubstrate is increased, whereby reliability during secondary mountingcan be improved while preventing a decrease in throughput.

(16) A circuit board according to a further embodiment of the presentinvention has the above semiconductor device mounted thereon.

(17) An electronic instrument according to a still further embodiment ofthe present invention includes the above semiconductor device.

(18) A method of manufacturing a semiconductor device according to a yetfurther embodiment of the present invention includes:

forming a resin layer on a semiconductor substrate in which anintegrated circuit is formed and which includes interconnects andelectrodes, the interconnects electrically connected with thesemiconductor substrate, and the electrodes being formed on theinterconnects;

forming wiring pattern so as to be electrically connected with theelectrodes;

forming a plurality of external terminals on the wiring pattern so as tobe supported by the resin layer; and

forming a plurality of dummy terminals so as to be supported by theresin layer without being electrically connected with the electrodes.According to this method of manufacturing a semiconductor device, sincebonding strength can be increased by the dummy terminals when bondingthe semiconductor device to a motherboard or the like, electricalconnection failure of the external terminals can be reduced.

The embodiments of the present invention are described below withreference to the drawings.

First Embodiment

FIG. 1 is illustrative of a semiconductor device according to a firstembodiment of the present invention. FIG. 2 is a cross-sectional view ofthe semiconductor device shown in FIG. 1 along the line II-II. FIG. 3 isa cross-sectional view of the semiconductor device shown in FIG. 1 alongthe line III-III. The semiconductor device includes a semiconductorsubstrate 10. The semiconductor substrate 10 shown in FIG. 1 is asemiconductor chip. However, a semiconductor wafer may also be used. Anintegrated circuit 12 is formed in the semiconductor substrate 10. Oneintegrated circuit 12 is formed in a semiconductor chip, and a pluralityof integrated circuits 12 are formed in a semiconductor wafer. A regionin which the integrated circuit 12 is formed may be referred to as anactive region.

The semiconductor substrate 10 includes a plurality of interconnects (orinterconnect layer) 14 electrically connected with the semiconductorsubstrate 10. The interconnects 14 include an interconnect electricallyconnected with the integrated circuit 12 (or active region). Theinterconnects 14 may include an interconnect which is connected with thesemiconductor substrate 10 without being electrically connected with theintegrated circuit 12. An electrode (pad) 16 is formed on theinterconnect 14.

The semiconductor substrate 10 may include a passivation film 18. Thepassivation film 18 may be a resin film, a silicon oxide film, or asilicon nitride film. The passivation film 18 may be transparent such asa silicon oxide film, or may be opaque. The passivation film 18 may beformed to avoid a part (center, for example) of the electrodes 16. Thepassivation film 18 covers the interconnects 14. The passivation film 18may cover the entire integrated circuit 12 (or active region).

A resin layer 20 is formed on the semiconductor substrate 10. The resinlayer 20 is formed so that a part of the semiconductor substrate 10(part of the passivation film 18, for example) is exposed. The resinlayer 20 is an electrical insulating layer. The resin layer 20 does notcontain conductive particles. The resin layer 20 may have a stressrelief function. The resin layer 20 may be formed of a polyimide resin,silicone-modified polyimide resin, epoxy resin, silicone-modified epoxyresin, benzocyclobutene (BCB), polybenzoxazole (PBO), or the like. Theresin layer 20 may be formed of a material having a light shieldingproperty. The resin layer 20 is formed to avoid the top of theelectrodes 16. At least a part of the resin layer 20 may be formed onthe integrated circuit 12 (or active region).

The semiconductor device includes wiring pattern 22 electricallyconnected with the electrodes 16. The wiring pattern 22 is formed sothat a part of the wiring pattern 22 overlaps the electrode 16. Thewiring pattern 22 is formed to extend to the resin layer 20 (uppersurface of the resin layer 20, for example). The wiring pattern 22 maypass over the passivation film 18. The wiring pattern 22 may be formedof a three-layer structure consisting of a TiW sputter interconnectlayer, a Cu sputter interconnect layer, and a Cu plating interconnectlayer, for example.

A plurality of external terminals (solder balls, for example) 24 areformed on the wiring pattern 22. The external terminals 24 may be formedof soft solder or hard solder. As the soft solder, solder containing nolead (hereinafter called lead-free solder) may be used. As the lead-freesolder, a tin-silver (Sn—Ag) alloy, tin-bismuth (Sn—Bi) alloy, tin-zinc(Sn—Zn) alloy, or tin-copper (Sn—Cu) alloy may be used. At least one ofsilver, bismuth, zinc, and copper may be added to these alloys. Theexternal terminal 24 is formed on the resin layer 20 and is supported bythe resin layer 20. Therefore, a part of the external force applied tothe external terminal 24 is absorbed by the resin layer 20.

The semiconductor device includes a plurality of dummy terminals 26. Thedummy terminals 26 are not electrically connected with the electrodes16. The dummy terminals 26 are not electrically connected with theexternal terminals 24. The dummy terminals 26 are supported by the resinlayer 20. For example, the dummy terminals 26 may be formed on pads 28formed on the resin layer 20.

The dummy terminal 26 may be formed of the same material as the externalterminal 24 (solder, for example). The dummy terminal 26 may be formedof a material different from the material for the external terminal 24so that the dummy terminal 26 and the external terminal 24 differ inproperties (elasticity, adhesion, and the like). If the dummy terminals26 are formed of an adhesive, the dummy terminals 26 can be caused toadhere to a motherboard while being crushed. This enables the differencein size between the dummy terminals 26 to be absorbed. As amodification, a dummy terminal 27 shown in FIG. 4 includes a centerportion formed of a resin and a surface layer formed of solder. Thisallows the dummy terminals 26 to be easily elastically deformed, wherebythe dummy terminals 26 can be prevented from being removed from theinterconnect pattern of the motherboard, even if external force isapplied. Moreover, the dummy terminals 26 and the external terminals 24can be connected at the same time by forming the surface layer by usingsolder.

In the case where the upper surface of the resin layer 20 is in a shapeof a rectangle, the dummy terminals 26 may be formed at least at a pairof corners on the diagonal of the rectangle. The upper surface of theresin layer 20 may be divided into a first region which is located onthe end and a second region which is closer to the center than the firstregion. In this case, the dummy terminals 26 may be formed in the firstregion and the external terminals 24 may be formed in the second region.According to the present embodiment, since bonding strength can beincreased by the dummy terminals 26 when bonding the semiconductordevice to a motherboard or the like, electrical connection failure ofthe external terminals 24 can be reduced.

The semiconductor device may include a second resin layer (protectivelayer such as a solder resist) 30. The second resin layer 30 is formedon the resin layer 20. The second resin layer 30 is formed to cover thewiring pattern 22 so as to avoid an area of the wiring pattern 22 inwhich the external terminal 24 is formed (land, for example). An openingwhich exposes the wiring pattern 22 on the resin layer 20 is formed inthe second resin layer 30. The external terminal 24 is connected withthe wiring pattern 22 through the opening formed in the second resinlayer 30. The second resin layer 30 is in contact with at least the baseof the external terminals 24. The second resin layer 30 may cover theelectrodes 16.

In a method of manufacturing the semiconductor device according to thepresent embodiment, a semiconductor wafer is used as the semiconductorsubstrate 10. The resin layer 20 is formed on the semiconductorsubstrate 10 (on the passivation film 18, for example). The formationprocess of the resin layer 20 may include applying a resin precursor(thermosetting resin precursor, for example) to the semiconductorsubstrate 10, or forming a resin precursor layer by spreading a resinprecursor on the semiconductor substrate 10 by spin coating. Acontinuous or integral resin precursor layer may be formed by using aradiation sensitive resin precursor having a property sensitive toradiation (light (ultraviolet light or visible light), X-rays, orelectron beams), and the resin precursor layer may be patterned. Theresin precursor layer is patterned by applying lithography. The resinlayer 20 may be formed by printing (screen printing, for example). Theresin layer 20 may be formed of either a plurality of layers or a singlelayer. The resin layer 20 is formed to avoid the top of the electrodes16. The resin layer 20 may be formed to avoid a cutting region of thesemiconductor substrate 10.

The wiring pattern 22 are formed to be electrically connected with theelectrodes 16. The wiring pattern 22 is formed to extend to the resinlayer 20. The wiring pattern 22 is formed to pass over the electrode 16.The wiring pattern 22 may pass on the side surface of the resin layer20. The wiring pattern 22 may be formed to include a land (area widerthan the line). The external terminal 24 is formed on the land. Thewiring pattern 22 may be formed of either a single layer or a pluralityof layers. For example, a TiW sputter film and a Cu sputter film arestacked in that order by sputtering, and a plating resist film is thenformed. An opening corresponding to the wiring pattern 22 is formed inthe plating resist film by using photolithographic technology, and a Cuplating interconnect layer is formed by copper electroplating throughthe opening. The plating resist film is then removed and a Cu sputterinterconnect layer and a TiW sputter interconnect layer are formed byetching the Cu sputter film and the TiW sputter film by using the Cuplating interconnect layer as a mask to form the wiring pattern 22.

The second resin layer 30 may be formed on the resin layer 20. Thedescription of the resin layer 20 may be applied to the second resinlayer 30. The second resin layer 30 may be a solder resist. The secondresin layer 30 is formed to cover the wiring pattern 22 excluding a part(center of the land, for example) of the wiring pattern 22. The secondresin layer 30 may be formed so that the cutting region of thesemiconductor substrate 10 is exposed.

The external terminals 24 are formed on the wiring pattern 22 so as tobe supported by the resin layer 20. The external terminals 24 may beformed by applying a conventional method. The dummy terminals 26 areformed so as to be supported by the resin layer 20. The pads 28 may beformed on the resin layer 20, and the dummy terminals 26 may be formedon the pads 28.

A third resin layer (not shown) may be formed on the second resin layer30, if necessary. The description of the resin layer 20 may be appliedto the third resin layer. The third resin layer is formed to cover anarea other than the top of the external terminals 24. This enablesstress which occurs due to external force applied to the externalterminals 24 to be dispersed. This also enables bonding between theexternal terminals 24 and the wiring pattern 22 to be reinforced. Thethird resin layer may be formed to cover the entire semiconductorsubstrate 10 and then patterned. The third resin layer may be formed tocover the external terminals 24 and be removed from the top of theexternal terminals 24. The third resin layer may be patterned byapplying lithography. A part of the third resin layer may be removed byusing a laser or ashing.

As shown in FIG. 5, the semiconductor substrate 10 may be cut (diced orscribed). If the resin layer 20 and the second resin layer 30 are notformed in the cutting region of the semiconductor substrate 10, cloggingof a cutter (or blade) 32 can be prevented since the resin is not cut.The semiconductor device is thus obtained.

Second Embodiment

FIG. 6 is illustrative of a semiconductor device according to a secondembodiment of the present invention. In the present embodiment, aconductive film 42 is formed below the external terminals (not shown)and dummy terminals 40. The conductive film 42 shown in FIG. 6 is formedon the semiconductor substrate 10 (on the passivation film 18, forexample) under a resin layer 44. However, the conductive film 42 may beformed inside the resin layer 44. The conductive film 42 may be formedto cover the integrated circuit 12 (region in which the active elementis formed, for example). This enables an electromagnetic wave shieldingeffect for the integrated circuit 12 to be obtained.

As a modification, a conductive film 50 may be divided into a pluralityof sections 52 provided at an interval from each other, as shown in FIG.7. The influence of internal stress of the conductive film 50 on thesemiconductor substrate 10 can be reduced by dividing the conductivefilm 50. The conductive film 50 is formed so that the integrated circuit12 (region in which the active element is formed, for example) islocated in the region in which the sections 52 are formed (regionincluding the sections 52 and the space between the sections 52). Thisenables the electromagnetic wave shielding effect for the integratedcircuit 12 to be obtained.

In the examples shown in FIGS. 6 and 7, the conductive film 42 (or 50)is electrically connected with the dummy terminals 40 without beingelectrically connected with the electrodes 16. In more detail,through-holes 46 are formed in the resin layer 44 so as to overlap apart of the conductive film 42 (or 50). A wiring pattern 48 is formedfrom the conductive film 42 (or 50) so as to pass on the inner surfaceof the through-hole 46 and extend to the upper surface of the resinlayer 44. The dummy terminals 40 are formed on the wiring pattern 48 soas to be supported by the resin layer 44. The material for the dummyterminal 40 may be selected from the materials used for the externalterminal 24 (see FIG. 2). The electromagnetic wave shielding effect canbe increased by electrically connecting the conductive film 42 (or 50)with GND through the dummy terminals 40.

The description in the first embodiment is applied to otherconfigurations and the manufacturing method. In the present embodiment,the effects described in the first embodiment can also be achieved.

FIGS. 8 to 10 are illustrative of modifications of the dummy terminals.These modifications may be applied to the first and second embodiments.As shown in FIG. 8, dummy terminals 100 may be formed to be larger thanall the external terminals 22. This enables adhesion of the dummyterminals 100 to be increased. As shown in FIG. 9, at least two dummyterminals 110 may be disposed to be adjacent to each other. At least twodummy terminals 110 may be unified by melting the dummy terminals 110.This enables adhesion of the dummy terminals 110 to be increased withoutchanging the size of the dummy terminals 110. In the case where a resinlayer 120 has an oblong shape (rectangle or oval, for example) as shownin FIG. 10, dummy terminals 122 may be formed on both ends of the oblongshape in the longitudinal direction.

Third Embodiment

FIG. 11 is a cross-sectional view illustrating a semiconductor deviceaccording to a third embodiment of the present invention. FIG. 12 is abottom view of the semiconductor device. An interconnect layer 62 isformed on the surface of an interposer substrate 60. A semiconductorchip (IC chip, for example) 64 is mounted (surface-mounted, for example)on the surface of the interposer substrate 60. The semiconductor chip 64is connected with the interconnect layer 62 through bumps 66 and issealed with a mold resin 68.

An interconnect layer 70 and lands 72 are formed on the back surface ofthe interposer substrate 60. The interconnect layers 62 and 70 areconnected through through-holes 74 formed in the interposer substrate60. The lands 72 are disposed on the outermost periphery of theinterposer substrate 60. Dummy bumps (or dummy balls) 76 are formed onthe lands 72. The dummy bumps 76 are disposed on the outermost peripheryof the interposer substrate 60. External terminals (solder balls, forexample) 78 are disposed more inwardly on the interposer substrate 60than the dummy bumps 76. The external terminals 78 are connected withthe interconnect layer 70.

According to the present embodiment, the external terminals 78 can beprevented from being disposed on the outermost periphery (region inwhich frequency of connection failure is high) of the interposersubstrate 60. Moreover, the connection state of the external terminals78 can be reinforced by the dummy bumps 76 after mounting the interposersubstrate 60 on the motherboard. Therefore, connection failure of theexternal terminals 78 can be reduced during surface mounting withoutincreasing the number of mounting steps even if the size of thesemiconductor device is increased, whereby reliability during secondarymounting of the semiconductor device to which the ball grid array isapplied can be improved while preventing a decrease in throughput.

FIG. 13 shows a circuit board 1000 on which a semiconductor device 1described in the above embodiment is mounted. FIGS. 14 and 15respectively show a notebook-type personal computer 2000 and a portabletelephone 3000 as examples of electronic instruments including thesemiconductor device.

The present invention is not limited to the above-described embodiments.Various modifications and variations are possible. For example, thepresent invention includes configurations essentially the same as theconfigurations described in the embodiments (for example, configurationshaving the same function, method, and results, or configurations havingthe same object and results). The present invention includesconfigurations in which any unessential part of the configurationdescribed in the embodiments is replaced. The present invention includesconfigurations having the same effects or achieving the same object asthe configurations described in the embodiments. The present inventionincludes configurations in which conventional technology is added to theconfigurations described in the embodiments.

1. A semiconductor device, comprising: a semiconductor substrate; thatincludes an interconnect and an electrode; an integrated circuit formedon the semiconductor substrate, the interconnect being electricallyconnected with the integrated circuit and the electrode; a resin layerthat is disposed above the semiconductor substrate; a wiring patternthat is electrically connected with the electrode; an external terminalthat is disposed on the wiring pattern and overlaps the resin layer; anda dummy terminal that is disposed above the resin layer so that thedummy terminal overlaps the resin layer without being electricallyconnected with the electrode, an entire portion of the dummy terminaloverlapping the resin layer.
 2. The semiconductor device as defined inclaim 1, the resin layer including an upper surface, a lower surface, anend portion, and a center, the upper surface of the resin layerincluding a first region which is located in the end portion of theresin layer and a second region which is closer to the center of theresin layer than the first region, the dummy terminal being disposed inthe first region, and the external terminal being disposed in the secondregion.
 3. The semiconductor device as defined in claim 2, the uppersurface of the resin layer having a rectangular shape; and the dummyterminal being disposed at a corner of the upper surface.
 4. Thesemiconductor device as defined in claim 2, the upper surface of theresin layer having an oblong shape, and the dummy terminal beingdisposed on an end of the oblong shape in a longitudinal direction. 5.The semiconductor device as defined in claim 1, the dummy terminal beingformed of a material different from a material for the externalterminal.
 6. The semiconductor device as defined in claim 1, the dummyterminal including a center portion and a surface layer, the centerportion being formed of resin, and the surface layer being formed of asolder.
 7. The semiconductor device as defined in claim 1, the dummyterminal being larger than the external terminal.
 8. The semiconductordevice as defined in claim 1, further comprising: a conductive filmbeing disposed below the external terminal and the dummy terminal. 9.The semiconductor device as defined in claim 8, the conductive filmbeing disposed above the semiconductor substrate and below the resinlayer.
 10. The semiconductor device as defined in claim 8, theconductive film being disposed to cover a region in which the integratedcircuit is formed.
 11. The semiconductor device as defined in claim 8,the conductive film being divided into a plurality of sections providedat an interval from each other.
 12. The semiconductor as defined inclaim 11, the integrated circuit being disposed in a region in which theplurality of sections of the conductive film are disposed.
 13. Thesemiconductor device as defined in claim 8, the conductive film beingelectrically connected with the dummy terminal without beingelectrically connected with the electrode.
 14. A circuit board on whichthe semiconductor device as defined in claim 1 is mounted.
 15. Anelectronic instrument including the semiconductor device as defined inclaim
 1. 16. A method of manufacturing a semiconductor device,comprising: forming a resin layer above a semiconductor substrate inwhich an integrated circuit is formed and which includes an interconnectand an electrode, the interconnect electrically connected with theintegrated circuit and the electrode; forming a wiring pattern so as tobe electrically connected with the electrode; forming an externalterminal on the wiring pattern so as to overlap the resin layer; andforming a dummy terminal above the resin layer so that the dummyterminal overlaps the resin layer without being electrically connectedwith the electrode, an entire portion of the dummy terminal overlappingthe resin layer.